Littelfuse IXTA50N20P

包装/外壳

TO-263-3

EU RoHS

Compliant

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

50

Maximum Drain Source Resistance (mOhm)

60@10V

Typical Gate Charge @ Vgs (nC)

70@10V

Typical Gate Charge @ 10V (nC)

70

Typical Input Capacitance @ Vds (pF)

2720@25V

Maximum Power Dissipation (mW)

360000

Typical Fall Time (ns)

30

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

70

Typical Turn-On Delay Time (ns)

26

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

4.83(Max)

Package Width

9.65(Max)

Package Length

10.41(Max)

PCB changed

2

Tab

Tab

Supplier Package

D2PAK

Vds - Drain-Source Breakdown Voltage

200 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

360 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

70 nC

Rds On - Drain-Source Resistance

60 mOhms

Id - Continuous Drain Current

50 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N