Littelfuse IXTH1N250

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

2500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

1.5

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (mOhm)

40000@10V

Typical Gate Charge @ Vgs (nC)

41@10V

Typical Gate Charge @ 10V (nC)

41

Typical Gate to Drain Charge (nC)

16@10V

Typical Gate to Source Charge (nC)

8

Typical Input Capacitance @ Vds (pF)

1660@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

23@25V

Minimum Gate Threshold Voltage (V)

2

Typical Output Capacitance (pF)

77

Maximum Power Dissipation (mW)

250000

Typical Fall Time (ns)

39

Typical Rise Time (ns)

25

Typical Turn-Off Delay Time (ns)

132

Typical Turn-On Delay Time (ns)

69

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Positive Gate Source Voltage (V)

20

Maximum Pulsed Drain Current @ TC=25°C (A)

6

Typical Gate Plateau Voltage (V)

4

Typical Reverse Recovery Time (ns)

2500

Maximum Diode Forward Voltage (V)

1.5

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-247

Supplier Package

TO-247AD

Lead Shape

通孔

MSL

-

Qualification

-

Continuous Drain Current Id

1.5A

零件状态

活跃

引脚数量

3

配置

Single

功率耗散

250W

信道型

N