Littelfuse IXTH26P20P
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IXTH26P20P
1475-IXTH26P20P
晶体管 - FET,MOSFET - 阵列
TO-247-3
大陆
立即发货

IXTH26P20P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Littelfuse stock available at utmel
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IXTH26P20P详情
Littelfuse IXTH26P20P重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
EU RoHS
符合免除
HTS
8541.29.00.95
SVHC
有
SVHC Exceeds Threshold
有
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
200
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
26
Maximum Drain Source Resistance (MOhm)
170@10V
Typical Gate Charge @ Vgs (nC)
56@10V
Typical Gate Charge @ 10V (nC)
56
Typical Input Capacitance @ Vds (pF)
2740@25V
Maximum Power Dissipation (mW)
300000
Typical Fall Time (ns)
21
Typical Rise Time (ns)
33
Typical Turn-Off Delay Time (ns)
46
Typical Turn-On Delay Time (ns)
18
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
21.46(Max)
Package Width
5.3(Max)
Package Length
16.26(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-247
Vds - Drain-Source Breakdown Voltage
200 V
Vgs th - Gate-Source Threshold Voltage
4 V
Pd - Power Dissipation
300 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
56 nC
Rds On - Drain-Source Resistance
170 mOhms
Id - Continuous Drain Current
26 A
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
P
IXTH26P20P拓展信息
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Littelfuse
Littelfuse
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