Littelfuse IXTH300N04T2

包装/外壳

TO-247-3

Process Technology

TrenchFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

300

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (MOhm)

2.5@10V

Typical Gate Charge @ Vgs (nC)

145@10V

Typical Gate Charge @ 10V (nC)

145

Typical Input Capacitance @ Vds (pF)

10700@25V

Maximum Power Dissipation (mW)

480000

Category

功率MOSFET

PPAP

无

Automotive

无

SVHC Exceeds Threshold

有

SVHC

有

EU RoHS

符合免除

Typical Fall Time (ns)

13

Typical Rise Time (ns)

17

Typical Turn-Off Delay Time (ns)

32

Typical Turn-On Delay Time (ns)

22

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247AD

Vds - Drain-Source Breakdown Voltage

40 V

Transistor Polarity

N-Channel

Mounting Styles

通孔

Rds On - Drain-Source Resistance

2.5 mOhms

Id - Continuous Drain Current

300 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

信道型

N