Littelfuse IXTH36P15P

包装/外壳

TO-247-3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

150

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

36

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

110@10V

Typical Gate Charge @ Vgs (nC)

55@10V

Typical Gate Charge @ 10V (nC)

55

Typical Input Capacitance @ Vds (pF)

3100@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

15

Typical Rise Time (ns)

31

Typical Turn-Off Delay Time (ns)

36

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247AD

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

300 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

55 nC

Rds On - Drain-Source Resistance

110 mOhms

Id - Continuous Drain Current

36 A

系列

IXTH36P15

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

P