Littelfuse IXTH50P10

材料

Si

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.21.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

50

Maximum Drain Source Resistance (MOhm)

55@10V

Typical Gate Charge @ Vgs (nC)

140@10V

Typical Gate Charge @ 10V (nC)

140

Typical Input Capacitance @ Vds (pF)

4200@25V

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

38

Typical Rise Time (ns)

39

Typical Turn-Off Delay Time (ns)

86

Typical Turn-On Delay Time (ns)

46

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

21.46(Max)

Package Width

5.3(Max)

Package Length

16.26(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-247AD

Continuous Drain Current

50(A)

Drain-Source On-Volt

100(V)

Operating Temperature Classification

Military

Package Type

TO-247AD

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

无

MSL

-

Qualification

-

Continuous Drain Current Id

50A

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

P

配置

Single

功率耗散

300(W)

信道型

P