Littelfuse IXTH6N50D2
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IXTH6N50D2
1475-IXTH6N50D2
晶体管 - FET,MOSFET - 阵列
TO-247-3
大陆
立即发货

IXTH6N50D2 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Littelfuse stock available at utmel
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IXTH6N50D2详情
Littelfuse IXTH6N50D2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
EU RoHS
符合免除
SVHC
有
SVHC Exceeds Threshold
有
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Depletion
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
500
Maximum Gate Source Voltage (V)
±20
Maximum Drain Source Resistance (MOhm)
550@0V
Typical Gate Charge @ Vgs (nC)
96@5V
Typical Gate Charge @ 10V (nC)
96
Typical Input Capacitance @ Vds (pF)
2800@25V
Maximum Power Dissipation (mW)
300000
Typical Fall Time (ns)
43
Typical Rise Time (ns)
72
Typical Turn-Off Delay Time (ns)
82
Typical Turn-On Delay Time (ns)
28
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
21.46(Max)
Package Width
5.3(Max)
Package Length
16.26(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-247
MSL
-
Qualification
-
Continuous Drain Current Id
6A
Vds - Drain-Source Breakdown Voltage
500 V
Vgs th - Gate-Source Threshold Voltage
4.5 V
Pd - Power Dissipation
300 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
96 nC
Rds On - Drain-Source Resistance
550 mOhms
Id - Continuous Drain Current
6 A
系列
IXTH6N50
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
功率耗散
300W
信道型
N
IXTH6N50D2拓展信息
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