Littelfuse IXTK32P60P

包装/外壳

TO-264-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.10.00.80

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

32

Maximum Drain Source Resistance (MOhm)

350@10V

Typical Gate Charge @ Vgs (nC)

196@10V

Typical Gate Charge @ 10V (nC)

196

Typical Input Capacitance @ Vds (pF)

11100@25V

Maximum Power Dissipation (mW)

890000

Typical Fall Time (ns)

33

Typical Rise Time (ns)

27

Typical Turn-Off Delay Time (ns)

95

Typical Turn-On Delay Time (ns)

37

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

890 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

196 nC

Rds On - Drain-Source Resistance

350 mOhms

Id - Continuous Drain Current

32 A

系列

IXTK32P60

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

P