Littelfuse IXTK600N04T2

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

GigaMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

600

Maximum Drain Source Resistance (MOhm)

1.5@10V

Typical Gate Charge @ Vgs (nC)

590@10V

Typical Gate Charge @ 10V (nC)

590

Typical Input Capacitance @ Vds (pF)

40@25V

Maximum Power Dissipation (mW)

1250000

Typical Fall Time (ns)

250

Typical Rise Time (ns)

20

Typical Turn-Off Delay Time (ns)

90

Typical Turn-On Delay Time (ns)

40

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

26.16(Max)

Package Width

5.13(Max)

Package Length

19.96(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-264

零件状态

活跃

引脚数量

3

配置

Single

信道型

N