Littelfuse IXTN200N10T

包装/外壳

SOT-227-4

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

200

Maximum Drain Source Resistance (MOhm)

5.5@10V

Typical Gate Charge @ Vgs (nC)

152@10V

Typical Gate Charge @ 10V (nC)

152

Typical Input Capacitance @ Vds (pF)

9400@25V

Maximum Power Dissipation (mW)

550000

Typical Fall Time (ns)

34

Typical Rise Time (ns)

31

Typical Turn-Off Delay Time (ns)

45

Typical Turn-On Delay Time (ns)

35

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

Screw

Package Width

25.42(Max)

Package Length

38.23(Max)

PCB changed

4

Supplier Package

SOT-227B

Vr - Reverse Voltage

50 V

Pd - Power Dissipation

550 W

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

底座安装

Rds On - Drain-Source Resistance

5.5 mOhms

零件状态

活跃

类型

Trench

子类别

Discrete Semiconductor Modules

技术

Si

引脚数量

4

配置

Single

产品类别

Discrete Semiconductor Modules

信道型

N

产品

功率MOSFET模块