Littelfuse IXTP01N100D

包装/外壳

TO-220-3

材料

Si

EU RoHS

Compliant

HTS

8541.10.00.80

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Depletion

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1000

Maximum Gate Source Voltage (V)

±20

Maximum Drain Source Resistance (MOhm)

80000@0V

Typical Gate Charge @ Vgs (nC)

5.8@5V

Typical Input Capacitance @ Vds (pF)

100@25V

Maximum Power Dissipation (mW)

1100

Typical Fall Time (ns)

64

Typical Rise Time (ns)

10

Typical Turn-Off Delay Time (ns)

34

Typical Turn-On Delay Time (ns)

7

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220AD

Qualification

-

Continuous Drain Current Id

400mA

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

25 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

5.8 nC

Rds On - Drain-Source Resistance

80 Ohms

Id - Continuous Drain Current

400 mA

系列

IXTP01N100

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

25W

信道型

N