Littelfuse IXTP10P50P

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.5

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

10

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (mOhm)

1000@10V

Typical Gate Charge @ Vgs (nC)

50@10V

Typical Gate Charge @ 10V (nC)

50

Typical Gate to Drain Charge (nC)

18

Typical Gate to Source Charge (nC)

17

Typical Reverse Recovery Charge (nC)

5900

Typical Input Capacitance @ Vds (pF)

2840@25V

Typical Reverse Transfer Capacitance @ Vds (pF)

42@25V

Minimum Gate Threshold Voltage (V)

2

Typical Output Capacitance (pF)

275

Maximum Power Dissipation (mW)

300000

Typical Fall Time (ns)

44

Typical Rise Time (ns)

28

Typical Turn-Off Delay Time (ns)

52

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Positive Gate Source Voltage (V)

20

Maximum Pulsed Drain Current @ TC=25°C (A)

30

Typical Gate Plateau Voltage (V)

5.3

Typical Reverse Recovery Time (ns)

414

Maximum Diode Forward Voltage (V)

3

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220AB

零件状态

活跃

引脚数量

3

配置

Single

信道型

P