Littelfuse IXTP60N20T

包装/外壳

TO-220-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

60

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

40@10V

Typical Gate Charge @ Vgs (nC)

73@10V

Typical Gate Charge @ 10V (nC)

73

Typical Input Capacitance @ Vds (pF)

4530@25V

Maximum Power Dissipation (mW)

500000

Typical Fall Time (ns)

22

Typical Rise Time (ns)

13

Typical Turn-Off Delay Time (ns)

33

Typical Turn-On Delay Time (ns)

22

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

9.15(Max)

Package Width

4.83(Max)

Package Length

10.66(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-220AB

Qualification

-

Continuous Drain Current Id

60A

Vds - Drain-Source Breakdown Voltage

200 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

500 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Qg - Gate Charge

73 nC

Rds On - Drain-Source Resistance

40 mOhms

Id - Continuous Drain Current

60 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

500W

信道型

N