Littelfuse IXTP80N12T2

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

120

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

80

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (mOhm)

17@10V

Typical Gate Charge @ Vgs (nC)

80@10V

Typical Gate Charge @ 10V (nC)

80

Typical Input Capacitance @ Vds (pF)

4740@25V

Maximum Power Dissipation (mW)

325000

Typical Fall Time (ns)

28

Typical Rise Time (ns)

14

Typical Turn-Off Delay Time (ns)

39

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

零件状态

活跃

配置

Single

信道型

N