Littelfuse IXTQ180N10T

包装/外壳

TO-3P-3

EU RoHS

符合免除

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Continuous Drain Current (A)

180

Maximum Drain Source Resistance (MOhm)

6.4@10V

Typical Gate Charge @ Vgs (nC)

151@10V

Typical Gate Charge @ 10V (nC)

151

Typical Input Capacitance @ Vds (pF)

6900@25V

Maximum Power Dissipation (mW)

480000

Typical Fall Time (ns)

31

Typical Rise Time (ns)

54

Typical Turn-Off Delay Time (ns)

42

Typical Turn-On Delay Time (ns)

33

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Width

4.9(Max)

Package Length

15.8(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-3P

Supplier Package

TO-3P

Lead Shape

通孔

Vds - Drain-Source Breakdown Voltage

100 V

Pd - Power Dissipation

480 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

6.4 mOhms

Id - Continuous Drain Current

180 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N