Littelfuse IXTQ18N60P

包装/外壳

TO-3P-3

EU RoHS

符合免除

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

600

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

18

Maximum Drain Source Resistance (MOhm)

420@10V

Typical Gate Charge @ Vgs (nC)

49@10V

Typical Gate Charge @ 10V (nC)

49

Typical Input Capacitance @ Vds (pF)

2500@25V

Maximum Power Dissipation (mW)

360000

Typical Fall Time (ns)

22

Typical Rise Time (ns)

22

Typical Turn-Off Delay Time (ns)

62

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Width

4.9(Max)

Package Length

15.8(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-3P

Supplier Package

TO-3P

Lead Shape

通孔

Vds - Drain-Source Breakdown Voltage

600 V

Pd - Power Dissipation

360 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

420 mOhms

Id - Continuous Drain Current

18 A

系列

IXTQ18N60

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

N