Littelfuse IXTQ480P2

包装/外壳

TO-3P-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

500

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

52

Maximum Drain Source Resistance (mOhm)

120@10V

Typical Gate Charge @ Vgs (nC)

108@10V

Typical Gate Charge @ 10V (nC)

108

Typical Input Capacitance @ Vds (pF)

6800@25V

Maximum Power Dissipation (mW)

960000

Typical Fall Time (ns)

8

Typical Rise Time (ns)

11

Typical Turn-Off Delay Time (ns)

40

Typical Turn-On Delay Time (ns)

22

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Width

4.9(Max)

Package Length

15.8(Max)

PCB changed

3

Tab

Tab

Supplier Package

TO-3P

Continuous Drain Current

52(A)

Drain-Source On-Volt

500(V)

Operating Temperature Classification

Military

Package Type

TO-3P

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

Vds - Drain-Source Breakdown Voltage

500 V

Pd - Power Dissipation

960 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Rds On - Drain-Source Resistance

120 mOhms

Id - Continuous Drain Current

52 A

零件状态

活跃

类型

功率MOSFET

技术

Si

引脚数量

3

极性

N

配置

Single

通道数量

1 Channel

功率耗散

960(W)

信道型

N