Littelfuse IXTT110N10L2

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.21.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

110

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (mOhm)

18@10V

Typical Gate Charge @ Vgs (nC)

260@10V

Typical Gate Charge @ 10V (nC)

260

Typical Input Capacitance @ Vds (pF)

10500@25V

Maximum Power Dissipation (mW)

600000

Typical Fall Time (ns)

24

Typical Rise Time (ns)

130

Typical Turn-Off Delay Time (ns)

99

Typical Turn-On Delay Time (ns)

28

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268

Continuous Drain Current

110(A)

Drain-Source On-Volt

100(V)

Operating Temperature Classification

Military

Package Type

TO-268

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

无

Qualification

-

Continuous Drain Current Id

110A

零件状态

活跃

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

600(W)

信道型

N