Littelfuse IXTT1N300P3HV

包装/外壳

TO-268-3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

3000

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

1

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

25

Maximum Drain Source Resistance (MOhm)

50000@10V

Typical Gate Charge @ Vgs (nC)

30.6@10V

Typical Gate Charge @ 10V (nC)

30.6

Typical Input Capacitance @ Vds (pF)

895@25V

Maximum Power Dissipation (mW)

195000

Typical Fall Time (ns)

60

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

78

Typical Turn-On Delay Time (ns)

22

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Qualification

-

Continuous Drain Current Id

1A

Vds - Drain-Source Breakdown Voltage

3 kV

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

195 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

30.6 nC

Rds On - Drain-Source Resistance

50 Ohms

Id - Continuous Drain Current

1 A

零件状态

活跃

技术

Si

配置

Single

通道数量

1 Channel

功率耗散

195W

信道型

N