Littelfuse IXTT500N04T2

包装/外壳

TO-268-3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

40

Maximum Continuous Drain Current (A)

500

Maximum Drain Source Resistance (MOhm)

1.6@10V

Typical Gate Charge @ Vgs (nC)

405@10V

Typical Gate Charge @ 10V (nC)

405

Typical Input Capacitance @ Vds (pF)

25000@25V

Maximum Power Dissipation (mW)

1000000

Typical Fall Time (ns)

44

Typical Rise Time (ns)

16

Typical Turn-Off Delay Time (ns)

68

Typical Turn-On Delay Time (ns)

37

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

1 kW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

405 nC

Rds On - Drain-Source Resistance

1.6 mOhms

Id - Continuous Drain Current

500 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

信道型

N