Littelfuse IXTY18P10T

包装/外壳

TO-252-3

EU RoHS

符合免除

HTS

8541.21.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±15

Maximum Continuous Drain Current (A)

18

Maximum Drain Source Resistance (mOhm)

120@10V

Typical Gate Charge @ Vgs (nC)

39@10V

Typical Gate Charge @ 10V (nC)

39

Typical Input Capacitance @ Vds (pF)

2100@25V

Maximum Power Dissipation (mW)

83000

Typical Fall Time (ns)

22

Typical Rise Time (ns)

26

Typical Turn-Off Delay Time (ns)

44

Typical Turn-On Delay Time (ns)

19

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.4(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

DPAK

Continuous Drain Current

18(A)

Drain-Source On-Volt

100(V)

Operating Temperature Classification

Military

Package Type

DPAK

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±15(V)

Number of Elements

1

Rad Hardened

无

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

83 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 15 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

39 nC

Rds On - Drain-Source Resistance

120 mOhms

Id - Continuous Drain Current

18 A

零件状态

活跃

类型

功率MOSFET

技术

Si

引脚数量

3

极性

P

配置

Single

通道数量

1 Channel

功率耗散

83(W)

信道型

P