Littelfuse IXTY32P05T

包装/外壳

TO-252-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchP

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

50

Maximum Gate Source Voltage (V)

±15

Maximum Continuous Drain Current (A)

32

Maximum Drain Source Resistance (MOhm)

39@10V

Typical Gate Charge @ Vgs (nC)

46@10V

Typical Gate Charge @ 10V (nC)

46

Typical Input Capacitance @ Vds (pF)

1975@25V

Maximum Power Dissipation (mW)

83000

Typical Fall Time (ns)

27

Typical Rise Time (ns)

28

Typical Turn-Off Delay Time (ns)

39

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.4(Max)

Package Width

6.3(Max)

Package Length

6.8(Max)

PCB changed

2

Tab

Tab

Standard Package Name

TO-252

Supplier Package

DPAK

Lead Shape

Gull-wing

Vds - Drain-Source Breakdown Voltage

50 V

Transistor Polarity

P-Channel

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

39 mOhms

Id - Continuous Drain Current

32 A

系列

IXTY32P05

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

信道型

P