Littelfuse IXTY44N10T-TRL

包装/外壳

TO-252-3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Category

功率MOSFET

Process Technology

TrenchFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

44

Maximum Drain Source Resistance (mOhm)

30@10V

Typical Gate Charge @ Vgs (nC)

27.4@10V

Typical Gate Charge @ 10V (nC)

27.4

Typical Input Capacitance @ Vds (pF)

1567@25V

Maximum Power Dissipation (mW)

130000

Typical Fall Time (ns)

32

Typical Rise Time (ns)

47

Typical Turn-Off Delay Time (ns)

36

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

2.4(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

DPAK

Typical Turn-On Delay Time

21 ns

Pd - Power Dissipation

130 W

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

30 mOhms

Typical Turn-Off Delay Time

36 ns

包装

卷带

零件状态

活跃

类型

Trench

子类别

Discrete Semiconductor Modules

技术

Si

引脚数量

3

配置

Single

上升时间

47 ns

产品类别

Discrete Semiconductor Modules

信道型

N

产品

功率MOSFET模块