Littelfuse IXTY48P05T

包装/外壳

TO-252-3

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchP

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

50

Maximum Gate Source Voltage (V)

±15

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

48

Maximum Gate Source Leakage Current (nA)

50

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

30@10V

Typical Input Capacitance @ Vds (pF)

3660@25V

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

13

Typical Rise Time (ns)

15

Typical Turn-Off Delay Time (ns)

30

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.4(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

DPAK

Vds - Drain-Source Breakdown Voltage

50 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

150 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 15 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

53 nC

Rds On - Drain-Source Resistance

30 mOhms

Id - Continuous Drain Current

48 A

系列

IXTY48P05

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

信道型

P