Littelfuse IXTY4N65X2-TRL

包装/外壳

TO-252-3

Category

功率MOSFET

PPAP

无

Automotive

无

ECCN (US)

EAR99

EU RoHS

Compliant

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

4

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

5

Maximum Drain Source Resistance (mOhm)

850@10V

Typical Input Capacitance @ Vds (pF)

455@25V

Maximum Power Dissipation (mW)

80000

Typical Fall Time (ns)

25

Typical Rise Time (ns)

28

Typical Turn-Off Delay Time (ns)

57

Typical Turn-On Delay Time (ns)

22

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.4(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

DPAK

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

80 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

850 mOhms

Id - Continuous Drain Current

4 A

包装

卷带

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

信道型

N