Littelfuse LSIC1MO120G0080

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4L

Package

Tube

Current - Continuous Drain (Id) @ 25℃

39A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

厂商

Littelfuse Inc.

Power Dissipation (Max)

214W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 10mA

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

214 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

92 nC

Rds On - Drain-Source Resistance

100 mOhms

Id - Continuous Drain Current

39 A

操作温度

-55°C ~ 175°C (TJ)

系列

-

技术

SiCFET (Silicon Carbide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

100mOhm @ 20A, 20V

输入电容(Ciss)(Max)@Vds

170 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

92 nC @ 20 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -6V

场效应管特性

-