Littelfuse MMIX1F360N15T2

包装/外壳

SMPD-24

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

150

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

235

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (MOhm)

4.4@10V

Typical Gate Charge @ Vgs (nC)

715@10V

Typical Gate Charge @ 10V (nC)

715

Typical Input Capacitance @ Vds (pF)

47500@25V

Maximum Power Dissipation (mW)

680000

Typical Fall Time (ns)

265

Typical Rise Time (ns)

170

Typical Turn-Off Delay Time (ns)

115

Typical Turn-On Delay Time (ns)

50

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

5.55(Max)

Package Width

23.25(Max)

Package Length

25.25(Max)

PCB changed

21

Standard Package Name

SMD

Supplier Package

SMPD-X

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

680 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

715 nC

Rds On - Drain-Source Resistance

4.4 mOhms

Id - Continuous Drain Current

235 A

系列

MMIX1F360N15

零件状态

活跃

技术

Si

引脚数量

21

配置

Single

信道型

N