Littelfuse VMO650-01F

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

±20

Maximum Continuous Drain Current (A)

690

Maximum Drain Source Resistance (MOhm)

1.8@10V

Typical Gate Charge @ Vgs (nC)

2300@10V

Typical Gate Charge @ 10V (nC)

2300

Typical Input Capacitance @ Vds (pF)

59000@25V

Maximum Power Dissipation (mW)

2500000

Typical Fall Time (ns)

200

Typical Rise Time (ns)

500

Typical Turn-Off Delay Time (ns)

800

Typical Turn-On Delay Time (ns)

250

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

150

Mounting

Screw

Package Height

30

Package Width

62

Package Length

110

PCB changed

4

Supplier Package

Y3-DCB

Process Technology

HiperFET

Category

功率MOSFET

PPAP

Unknown

Automotive

Unknown

HTS

8541.29.00.95

ECCN (US)

EAR99

EU RoHS

Compliant

零件状态

LTB

引脚数量

4

配置

单双源

信道型

N