Microchip 24C01A-3/SN

包装/外壳

TO-220F-3

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

33.8 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Forward Transconductance - Min

7 S

Channel Mode

Enhancement

Manufacturer

Rectron

Brand

Rectron

Qg - Gate Charge

48 nC

Rds On - Drain-Source Resistance

420 mOhms

RoHS

Details

Typical Turn-Off Delay Time

62 ns

Id - Continuous Drain Current

11 A

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

7 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET