Microchip APT106N60LC6

表面安装

NO

包装/外壳

TO-264-3

安装类型

通孔

供应商器件包装

TO-264 (L)

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

APT106N60LC6

Part Life Cycle Code

活跃

Ihs Manufacturer

MICROCHIP TECHNOLOGY INC

Package Description

FLANGE MOUNT, R-PSFM-T3

Risk Rank

5.71

Drain Current-Max (ID)

106 A

Number of Elements

1

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

25 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

833 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.352740 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Channel Mode

Enhancement

Brand

Microchip Technology / Atmel

Qg - Gate Charge

308 nC

Rds On - Drain-Source Resistance

35 mOhms

RoHS

Details

Typical Turn-Off Delay Time

277 ns

Id - Continuous Drain Current

106 A

Package

Tube

Base Product Number

APT106

Current - Continuous Drain (Id) @ 25℃

106A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

833W (Tc)

Product Status

活跃

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

CoolMOS™

子类别

MOSFETs

技术

Si

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

unknown

JESD-30代码

R-PSFM-T3

配置

SINGLE WITH BUILT-IN DIODE

通道数量

1 Channel

操作模式

增强型MOSFET

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

35mOhm @ 53A, 10V

不同 Id 时 Vgs(th)（最大值）

3.5V @ 3.4mA

输入电容(Ciss)(Max)@Vds

8390 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

308 nC @ 10 V

上升时间

79 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 N-Channel

JEDEC-95代码

TO-264AA

漏极-源极导通最大电阻

0.035 Ω

脉冲漏极电流-最大值(IDM)

318 A

DS 击穿电压-最小值

600 V

雪崩能量等级（Eas）

2200 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

场效应管特性

-

产品类别

MOSFET