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¥497.672145
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¥469.50203
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¥417.855133
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¥394.202959
Microchip Technology 2N5794U/TR
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2N5794U/TR
1610-2N5794U/TR
晶体管 - 双极性晶体管(BJT)- 阵列
6-SMD, No Lead
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TRANSISTOR DUAL SMALL-SIGNAL BJT
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2N5794U/TR详情
Microchip Technology 2N5794U/TR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-SMD, No Lead
供应商器件包装
6-SMD
厂商
微芯片技术
Package
Tape & Reel (TR)
Product Status
活跃
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
600 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 200 C
DC Collector/Base Gain hfe Min
35 at 100 uA, 10 V
Collector-Emitter Saturation Voltage
900 mV
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
SMD/SMT
Manufacturer
Microchip
Brand
微芯片技术
Maximum DC Collector Current
600 mA
DC Current Gain hFE Max
300 at 150 mA, 10 V
RoHS
N
Collector- Emitter Voltage VCEO Max
40 V
系列
Military, MIL-PRF-19500/495
操作温度
-65°C ~ 200°C (TJ)
包装
Reel
子类别
Transistors
技术
Si
配置
Dual
产品类别
BJTs - Bipolar Transistors
晶体管类型
2 NPN (Dual)
最小直流增益(hFE)@ Ic, Vce
100 @ 150mA, 10V
最大集极截止电流
10μA (ICBO)
不同 Ib, Ic 时 Vce 饱和度(最大值)
900mV @ 30mA, 300mA
频率转换
-
集电极基极电压(VCBO)
75 V
产品类别
Bipolar Transistors - BJT
2N5794U/TR拓展信息
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