Micro Commercial Components SICW080N120Y4-BP

Channel Mode

Enhancement

Id - Continuous Drain Current

39 A

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Pd - Power Dissipation

223 W

Qg - Gate Charge

41 nC

Rds On - Drain-Source Resistance

122 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

2.9 V

技术

SiC

通道数量

1 Channel