Micro Commercial Components SICW1000N170A-BP

Channel Mode

Enhancement

Id - Continuous Drain Current

3 A

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Pd - Power Dissipation

69 W

Qg - Gate Charge

15.5 nC

Rds On - Drain-Source Resistance

1.69 Ohms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.7 kV

Vgs - Gate-Source Voltage

- 5 V, + 25 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

技术

SiC

通道数量

1 Channel