Micro Commercial Components (MCC) SICW021N120P-BP

包装/外壳

TO-247AB-3

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

100 A

Rds On - Drain-Source Resistance

33.6 mOhms

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

200 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

469 W

Channel Mode

Enhancement

Fall Time

14 ns

Forward Transconductance - Min

24.4 S

Factory Pack Quantity

1800

Typical Turn-Off Delay Time

62 ns

Typical Turn-On Delay Time

30 ns

包装

Bulk

类型

SiC MOSFET

配置

Single

通道数量

1 Channel

上升时间

49 ns

产品

SiC MOSFETS