Micro Commercial Components (MCC) SICW025N065H-BP

包装/外壳

TO-247AB-3

RoHS

符合RoHS标准

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

107 A

Rds On - Drain-Source Resistance

35 mOhms

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

3.1 V

Qg - Gate Charge

275 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

375 W

Channel Mode

Enhancemen

Fall Time

15 ns

Forward Transconductance - Min

18.2 S

Factory Pack Quantity

1800

Typical Turn-Off Delay Time

29 ns

Typical Turn-On Delay Time

28 ns

包装

Bulk

配置

Single

通道数量

1 Channel

上升时间

50 ns

产品

SiC MOSFETS