Micro Commercial Components (MCC) SICW040N120H-BP

包装/外壳

TO-247AB-3

RoHS

符合RoHS标准

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

62 A

Rds On - Drain-Source Resistance

75 mOhms

Vgs - Gate-Source Voltage

- 10 V, + 25 V

Vgs th - Gate-Source Threshold Voltage

2.7 V

Qg - Gate Charge

229 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

326 W

Channel Mode

Enhancement

Fall Time

11 ns

Forward Transconductance - Min

15 S

Factory Pack Quantity

1800

Typical Turn-Off Delay Time

7 ns

Typical Turn-On Delay Time

26 ns

包装

Bulk

配置

Single

通道数量

1 CHannel

上升时间

50 ns

产品

SiC MOSFETS