Micro Commercial Components (MCC) SICW120N120H4-BP

包装/外壳

TO-247-4

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

24 A

Rds On - Drain-Source Resistance

200 mOhms

Vgs - Gate-Source Voltage

- 10 V, + 25 V

Vgs th - Gate-Source Threshold Voltage

2.95 V

Qg - Gate Charge

67 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

166 W

Channel Mode

Enhancement

Fall Time

33 ns

Forward Transconductance - Min

6.2 S

Factory Pack Quantity

1800

Typical Turn-Off Delay Time

34 ns

Typical Turn-On Delay Time

24 ns

配置

Single

通道数量

1 Channel

上升时间

24 ns

产品

SiC MOSFETS