Micron Technology MT4HTF6464HY-53EE1
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MT4HTF6464HY-53EE1
1616-MT4HTF6464HY-53EE1
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DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM Tray
1最小包装量--
MT4HTF6464HY-53EE1详情
Micron Technology MT4HTF6464HY-53EE1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Module
DRAM模块
Module Density
512Mbyte
Number of Chip per Module
4
Chip Density (bit)
1G
Data Bus Width (bit)
64
Maximum Clock Rate (MHz)
533
Chip Configuration
64Mx16
Minimum Operating Supply Voltage (V)
1.7
Typical Operating Supply Voltage (V)
1.8
Maximum Operating Supply Voltage (V)
1.9
Operating Current (mA)
720
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Module Sides
Single
ECC Support
无
Number of Ranks
Single
Number of Chip Banks
8
CAS Latency
4
PC Type
PC2-4200
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
SODIMM
Mounting
Socket
Package Height
30(Max)
Package Length
67.75(Max)
Package Width
2.45(Max)
PCB changed
200
Lead Shape
No Lead
包装
Tray
零件状态
Obsolete
引脚数量
200
组织结构
64Mx64
锁相环
无
刷新周期
8K
自我刷新
有
模块类型
200SODIMM
RoHS状态
是,有豁免
MT4HTF6464HY-53EE1拓展信息
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