Micron Technology MT8KTF51264HZ-1G6J1
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MT8KTF51264HZ-1G6J1
1616-MT8KTF51264HZ-1G6J1
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DRAM Module DDR3L SDRAM 4Gbyte 204SODIMM
1最小包装量--
MT8KTF51264HZ-1G6J1详情
Micron Technology MT8KTF51264HZ-1G6J1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
Socket
引脚数
204
Package Width
3.8(Max)
PCB changed
204
Lead Shape
No Lead
ECCN (US)
EAR99
Module
DRAM模块
Module Density
4Gbyte
Number of Chip per Module
8
Chip Density (bit)
4G
Data Bus Width (bit)
64
Maximum Clock Rate (MHz)
1600
Chip Configuration
512Mx8
Minimum Operating Supply Voltage (V)
1.283/1.425
Typical Operating Supply Voltage (V)
1.35/1.5
Maximum Operating Supply Voltage (V)
1.45/1.575
Operating Current (mA)
1256
Minimum Operating Temperature (°C)
0
Maximum Operating Temperature (°C)
70
Supplier Temperature Grade
Commercial
Module Sides
Double
ECC Support
无
Number of Ranks
Single
Number of Chip Banks
8
CAS Latency
11
PC Type
PC3-12800
SPD EEPROM Support
有
Standard Package Name
DIM
Supplier Package
SODIMM
Mounting
Socket
Package Height
30.15(Max)
Package Length
67.75(Max)
Number of Elements
8
RoHS
Compliant
零件状态
Obsolete
最高工作温度
70 °C
最小工作温度
0 °C
引脚数量
204
组织结构
512Mx64
最高频率
1.6 GHz
锁相环
无
刷新周期
8K
自我刷新
有
模块类型
204SODIMM
RoHS状态
是,有豁免
MT8KTF51264HZ-1G6J1拓展信息
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