Micron Technology MT8MTF51264HRZ-1G6E2
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MT8MTF51264HRZ-1G6E2
1616-MT8MTF51264HRZ-1G6E2
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DRAM Module DDR3L SDRAM 4Gbyte 204SODIMM
1最小包装量--
MT8MTF51264HRZ-1G6E2详情
Micron Technology MT8MTF51264HRZ-1G6E2重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Module
DRAM模块
Module Density
4Gbyte
Lead Shape
No Lead
PCB changed
204
Package Width
2.45(Max)
Package Length
67.75(Max)
Package Height
30.15(Max)
Mounting
Socket
Supplier Package
SODIMM
Standard Package Name
DIM
SPD EEPROM Support
有
PC Type
PC3-12800
CAS Latency
11
Number of Chip Banks
8
Number of Ranks
Single
ECC Support
无
Module Sides
Single
Supplier Temperature Grade
Commercial
Maximum Operating Temperature (°C)
70
Minimum Operating Temperature (°C)
0
Operating Current (mA)
1192
Maximum Operating Supply Voltage (V)
1.45/1.575
Typical Operating Supply Voltage (V)
1.35/1.5
Minimum Operating Supply Voltage (V)
1.283/1.425
Chip Configuration
512Mx8
Maximum Clock Rate (MHz)
1600
Data Bus Width (bit)
64
Chip Density (bit)
4G
Number of Chip per Module
8
零件状态
Obsolete
引脚数量
204
组织结构
512Mx64
锁相环
无
刷新周期
8K
自我刷新
有
模块类型
204SODIMM
RoHS状态
是,有豁免
MT8MTF51264HRZ-1G6E2拓展信息
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