Micron Technology MT8VDDT6464HIY-335F3
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MT8VDDT6464HIY-335F3
1616-MT8VDDT6464HIY-335F3
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DRAM Module DDR SDRAM 512Mbyte 200SODIMM Tray
1最小包装量--
MT8VDDT6464HIY-335F3详情
Micron Technology MT8VDDT6464HIY-335F3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
4A994.a
Module
DRAM模块
Module Density
512Mbyte
Number of Chip per Module
8
Chip Density (bit)
512M
Data Bus Width (bit)
64
Maximum Clock Rate (MHz)
333
Chip Configuration
64Mx8
Minimum Operating Supply Voltage (V)
2.3
Typical Operating Supply Voltage (V)
2.5
Maximum Operating Supply Voltage (V)
2.7
Operating Current (mA)
1400
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Supplier Temperature Grade
Industrial
ECC Support
无
Number of Ranks
Single
CAS Latency
2.5
Standard Package Name
DIM
Supplier Package
SODIMM
Mounting
Socket
Package Height
31.9(Max)
Package Length
67.75(Max)
Package Width
3.8(Max)
PCB changed
200
Lead Shape
No Lead
包装
Tray
零件状态
Obsolete
引脚数量
200
组织结构
64Mx64
模块类型
200SODIMM
RoHS状态
是,有豁免
MT8VDDT6464HIY-335F3拓展信息
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