Micron Technology NAND01GW3B2AN6E

EU RoHS

Compliant

ECCN (US)

3A991.b.1.a

Automotive

无

PPAP

无

Cell Type

NAND

Chip Density (bit)

1G

Block Organization

Symmetrical

Address Bus Width (bit)

28

Number of Bits/Word (bit)

8

Number of Words

128M

Programmability

有

Timing Type

Asynchronous

Max. Access Time (ns)

25000

Maximum Erase Time (S)

0.003/Block

Maximum Programming Time (ms)

0.7/Page

Interface Type

Parallel

Minimum Operating Supply Voltage (V)

2.7

Typical Operating Supply Voltage (V)

3|3.3

Maximum Operating Supply Voltage (V)

3.6

Programming Voltage (V)

2.7 to 3.6

Operating Current (mA)

30

Program Current (mA)

30

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

85

Supplier Temperature Grade

Industrial

Command Compatible

无

ECC Support

有

Support of Page Mode

有

Mounting

表面贴装

Package Height

1

Package Width

18.4

Package Length

12

PCB changed

48

Standard Package Name

SOP

Supplier Package

TSOP

Lead Shape

Gull-wing

包装

Tray

零件状态

Obsolete

引脚数量

48

建筑学

Sectored

行业规模

128Kbyte x 1024

页面尺寸

1KWords/2Kbyte

引导模块

无