Microsemi Corporation APT50GF60LRD
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APT50GF60LRD
1604-APT50GF60LRD
晶体管 - IGBT - 单个
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大陆
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Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
1最小包装量--
APT50GF60LRD详情
Microsemi Corporation APT50GF60LRD重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
表面安装
NO
Part Life Cycle Code
Transferred
Ihs Manufacturer
MICROSEMI CORP
Part Package Code
TO-264AA
Package Description
,
Operating Temperature-Max
150 °C
ECCN 代码
EAR99
Reach合规守则
compliant
引脚数量
3
极性/通道类型
N-CHANNEL
最大耗散功率(Abs)
300 W
集电极电流-最大值(IC)
50 A
集电极-发射器电压-最大值
600 V
栅极-发射极电压-最大值
20 V
栅极-发射极Thr电压-最大值
6.5 V
APT50GF60LRD拓展信息
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation
Microsemi Corporation








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