Microsemi Corporation W3H32M72E-400SBM
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W3H32M72E-400SBM
1619-W3H32M72E-400SBM
存储器
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DDR DRAM Module, 32MX72, 0.6ns, CMOS, PBGA208,
1最小包装量--
W3H32M72E-400SBM详情
Microsemi Corporation W3H32M72E-400SBM重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
材料
synthetic polyolefin
终端数量
208
Diameter of protected wire (cable)
5.2…9.0 mm
Diameter before shrinkage
10.5 mm
Diameter after shrinkage
5.0 mm
Wall thickness before shrinkage
0.3 mm
Wall thickness after shrinkage
0.6 mm
Gross weight
1245.00
Transport packaging size/quantity
46*46*50/10
Part Life Cycle Code
Transferred
Ihs Manufacturer
MICROSEMI CORP
Package Description
BGA, BGA208,11X19,40
Access Time-Max
0.6 ns
Clock Frequency-Max (fCLK)
200 MHz
Number of Words
33554432 words
Number of Words Code
32000000
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Code
BGA
Package Equivalence Code
BGA208,11X19,40
Package Shape
RECTANGULAR
Package Style
网格排列
Supply Voltage-Nom (Vsup)
1.8 V
包装
spool 100 m
ECCN 代码
EAR99
类型
Heat shrink tubing without adhesive
颜色
black
HTS代码
8542.32.00.36
端子位置
BOTTOM
终端形式
BALL
端子间距
1 mm
Reach合规守则
compliant
JESD-30代码
R-PBGA-B208
资历状况
不合格
Working voltage
600 V
温度等级
MILITARY
电源电流-最大值
1.7 mA
组织结构
32MX72
输出特性
3-STATE
内存宽度
72
Operating temperature range
-55…+125 °C
待机电流-最大值
0.035 A
记忆密度
2415919104 bit
I/O类型
COMMON
内存IC类型
DDR内存模块
Shrink temperature
+70…+120 °C
刷新周期
8192
Shrink ratio
2 : 1
W3H32M72E-400SBM拓展信息
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