Mitsubishi Materials U.S.A CM1200DB-34N

包装/外壳

Module

表面安装

NO

终端数量

10

晶体管元件材料

SILICON

RoHS

N

Collector- Emitter Voltage VCEO Max

1700 V

Collector-Emitter Saturation Voltage

2.15 V

Continuous Collector Current at 25 C

1200 A

Gate-Emitter Leakage Current

0.5 uA

Pd - Power Dissipation

6900 W

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 125 C

Maximum Gate Emitter Voltage

20 V

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

2

Manufacturer Part Number

CM1200DB-34N

Package Description

FLANGE MOUNT, R-XUFM-X10

Package Style

FLANGE MOUNT

Package Body Material

UNSPECIFIED

Turn-on Time-Nom (ton)

1400 ns

Turn-off Time-Nom (toff)

1500 ns

Operating Temperature-Max

150 °C

Package Shape

RECTANGULAR

Number of Elements

2

Part Life Cycle Code

活跃

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP

Risk Rank

5.68

Part Package Code

MODULE

包装

Bulk

系列

CM1200

附加功能

HIGH RELIABILITY

端子位置

UPPER

终端形式

UNSPECIFIED

Reach合规守则

unknown

引脚数量

10

JESD-30代码

R-XUFM-X10

资历状况

不合格

配置

Dual

箱体转运

ISOLATED

晶体管应用

电源控制

极性/通道类型

N-CHANNEL

最大耗散功率(Abs)

6900 W

集电极电流-最大值(IC)

1200 A

集电极-发射器电压-最大值

1700 V

栅极-发射极电压-最大值

20 V

VCEsat-最大值

2.8 V

产品

IGBT硅模块

高度(毫米)

38 mm