参数名
参数值
参数名
参数值
包装/外壳
TO-252AA-3
安装类型
底座安装
Vds - Drain-Source Breakdown Voltage
600 V
Typical Turn-On Delay Time
10 ns
Vgs th - Gate-Source Threshold Voltage
4 V
Pd - Power Dissipation
34 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.010476 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
5.7 nC
Rds On - Drain-Source Resistance
4.4 Ohms
RoHS
Details
Typical Turn-Off Delay Time
16 ns
Id - Continuous Drain Current
2 A
Package
Box
Voltage - Output 5
-
Voltage-Output 1
48V
Voltage - Output 6
-
厂商
Mornsun America, LLC
Product Status
活跃
Standard Number
60335-1; 62368-1
Voltage-Input
90 ~ 132 VAC, 180 ~ 264 VAC, 240 ~ 370 VDC
系列
NFET-600SMN
包装
Reel
操作温度
-40°C ~ 85°C (With Derating)
尺寸/尺寸
7.05 L x 4.17 W x 1.18 H (179.0mm x 106.0mm x 30.0mm)
类型
Enclosed
应用
Household Appliances, ITE (Commercial)
功率(瓦特)
350W
子类别
MOSFETs
技术
Si
输出的数量
1
审批机构
-
效率
89%
电压-隔离度
4 kV
配置
Single
通道数量
1 Channel
电压 - 输出 2
-
上升时间
24 ns
电流-输出1
7.3 A
产品类别
MOSFET
晶体管类型
1 N-Channel
电压 - 输出 3
-
电压 - 输出 4
-
最低负载要求
无
特征
Adjustable Output, DC Input Capable
产品类别
MOSFET