Murata Electronics NTR2101PT1G

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.21.00.95

Category

小信号

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

8

Maximum Gate Source Voltage (V)

±8

Maximum Continuous Drain Current (A)

3.7

Maximum Drain Source Resistance (MOhm)

[email protected]

Typical Gate Charge @ Vgs (nC)

[email protected]

Typical Input Capacitance @ Vds (pF)

1173@4V

Maximum Power Dissipation (mW)

960

Typical Fall Time (ns)

31

Typical Rise Time (ns)

15.75

Typical Turn-Off Delay Time (ns)

38

Typical Turn-On Delay Time (ns)

7.4

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

包装

卷带

零件状态

活跃

配置

Single

信道型

P