National Semiconductor Corporation DS25BR150TSD

表面安装

YES

终端数量

8

Type of module

IGBT

Semiconductor structure

transistor/transistor

Max. off-state voltage

1.2kV

Collector current

400A

Case

SEMITRANS3

Electrical mounting

FASTON connectors,

Gate-emitter voltage

±20V

Pulsed collector current

800A

Mechanical mounting

screw

Gross weight

325 g

Rohs Code

无

Part Life Cycle Code

Transferred

Ihs Manufacturer

NATIONAL SEMICONDUCTOR CORP

Package Description

HVSON, SOLCC8,.11,20

Operating Temperature-Max

85 °C

Operating Temperature-Min

-40 °C

Package Body Material

UNSPECIFIED

Package Code

HVSON

Package Equivalence Code

SOLCC8,.11,20

Package Shape

SQUARE

Package Style

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Supply Voltage-Max

3.6 V

Supply Voltage-Min

3 V

Supply Voltage-Nom

3.3 V

JESD-609代码

e0

ECCN 代码

EAR99

端子表面处理

Tin/Lead (Sn85Pb15)

性别

GENERAL PURPOSE

HTS代码

8542.39.00.01

端子位置

DUAL

终端形式

无铅

峰值回流焊温度（摄氏度）

260

功能数量

1

端子间距

0.5 mm

Reach合规守则

not_compliant

时间@峰值回流温度-最大值(s)

40

JESD-30代码

S-XDSO-N8

资历状况

不合格

温度等级

INDUSTRIAL

拓扑

IGBT half-bridge

座位高度-最大

0.8 mm

差分输出

YES

输入特性

DIFFERENTIAL

接口IC类型

LINE DRIVER

驱动程序位数

1

传输延迟-最大值

0.465 ns

第二个连接器加载的位置数

for UPS,

饱和电流

1

长度

3 mm

宽度

3 mm