Nexperia USA Inc. BC847BQC-QZ

安装类型

Surface Mount, Wettable Flank

包装/外壳

3-XDFN Exposed Pad

供应商器件包装

DFN1412D-3

厂商

Nexperia USA Inc.

Product Status

活跃

Current-Collector (Ic) (Max)

100 mA

Transistor Polarity

NPN

Package Type

SOT8009

Maximum Collector Emitter Voltage

45 V

Maximum DC Collector Current

100 mA

Minimum DC Current Gain

200

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

450 mW

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

200 at 2 mA, 5 V

Collector-Emitter Saturation Voltage

400 mV

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

100 MHz

Part # Aliases

934662743147

Manufacturer

Nexperia

Brand

Nexperia

DC Current Gain hFE Max

450 at 2 mA, 5 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

45 V

系列

-

操作温度

150°C (TJ)

包装

MouseReel

子类别

Transistors

技术

Si

配置

Single

功率耗散

450

功率 - 最大

360 mW

产品类别

BJTs - Bipolar Transistors

晶体管类型

NPN

最小直流增益（hFE）@ Ic, Vce

200 @ 2mA, 5V

最大集极截止电流

15nA (ICBO)

不同 Ib, Ic 时 Vce 饱和度（最大值）

400mV @ 5mA, 100mA

电压 - 集射极击穿（最大值）

45 V

转换频率

100

频率转换

100MHz

集电极基极电压(VCBO)

50 V

连续集电极电流

100

产品类别

Bipolar Transistors - BJT