North American Philips Discrete Products Div BSS131
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BSS131
1891-BSS131
晶体管 - 特殊用途
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
1最小包装量--
BSS131详情
North American Philips Discrete Products Div BSS131重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
外壳材料
1
Operating Temperature-Max
150 °C
Drain Current-Max (ID)
0.1 A
Ihs Manufacturer
NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
Part Life Cycle Code
Transferred
Rohs Code
无
Dielectric strength
1500 (50 Hz, 1 min.) V
Mounting hole size
21.7 x 28.5 mm
Maximum current
(AC) - 20/ 15 A
Key shape
Rectangle type C (concave)
Number of switching cycles (electrical)
≥10000
Number of contacts in a group/number of groups (total contacts)
3/ 2 (6P)
Color key/housing
red/black
Switching scheme
ON-ON (DPDT)
Transport packaging size/quantity
31*31*19/1000
Gross weight
13.25
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
Tin/Lead (Sn/Pb)
深度
34.5 (dimensions) mm
Reach合规守则
unknown
Contact resistance
≤35 mOhm
配置
SINGLE
Insulation resistance
≥100 (at Uins.dc=500 V) MOhm MOhm
操作模式
增强型MOSFET
Switch type
Double pole double throw (DPDT) key switch series IRS
极性/通道类型
N-CHANNEL
Operating temperature range
-25…+85 °C
Switching voltage
125 / 250 (AC) V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
0.36 W
Backlight type
Neon
宽度
21.5 (housing); 25.5 (front plate) mm
高度
31 (front plate) mm
BSS131拓展信息
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
North American Philips Discrete Products Div
Philips Semiconductors
North American Philips Discrete Products Div
North American Philips Discrete Products Div
North American Philips Discrete Products Div
North American Philips Discrete Products Div
Philips Semiconductors







哦! 它是空的。