BSS131
BSS131

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North American Philips Discrete Products Div BSS131

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型号

BSS131

utmel 编号

1891-BSS131

商品类别

晶体管 - 特殊用途

封装

--

交货地

大陆

交期(工作日)

立即发货

ROHS

ECAD

简介

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

起订量

1最小包装量--

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BSS131
BSS131 North American Philips Discrete Products Div Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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BSS131详情

North American Philips Discrete Products Div BSS131重要参数规格及、参数值,及相似型号如下:

  • 参数名
    参数值
    全选
  • 参数名
    参数值
    全选
  • 表面安装

    YES

  • 外壳材料

    1

  • Operating Temperature-Max

    150 °C

  • Drain Current-Max (ID)

    0.1 A

  • Ihs Manufacturer

    NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV

  • Part Life Cycle Code

    Transferred

  • Rohs Code

  • Dielectric strength

    1500 (50 Hz, 1 min.) V

  • Mounting hole size

    21.7 x 28.5 mm

  • Maximum current

    (AC) - 20/ 15 A

  • Key shape

    Rectangle type C (concave)

  • Number of switching cycles (electrical)

    ≥10000

  • Number of contacts in a group/number of groups (total contacts)

    3/ 2 (6P)

  • Color key/housing

    red/black

  • Switching scheme

    ON-ON (DPDT)

  • Transport packaging size/quantity

    31*31*19/1000

  • Gross weight

    13.25

  • JESD-609代码

    e0

  • ECCN 代码

    EAR99

  • 端子表面处理

    Tin/Lead (Sn/Pb)

  • 深度

    34.5 (dimensions) mm

  • Reach合规守则

    unknown

  • Contact resistance

    ≤35 mOhm

  • 配置

    SINGLE

  • Insulation resistance

    ≥100 (at Uins.dc=500 V) MOhm MOhm

  • 操作模式

    增强型MOSFET

  • Switch type

    Double pole double throw (DPDT) key switch series IRS

  • 极性/通道类型

    N-CHANNEL

  • Operating temperature range

    -25…+85 °C

  • Switching voltage

    125 / 250 (AC) V

  • 场效应管技术

    METAL-OXIDE SEMICONDUCTOR

  • 最大耗散功率(Abs)

    0.36 W

  • Backlight type

    Neon

  • 宽度

    21.5 (housing); 25.5 (front plate) mm

  • 高度

    31 (front plate) mm

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